SJ449 - 2SJ449

NEC

General Description

The 2SJ449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications.

Key Features

Low On-Resistance RDS(on) = 0.8 Ω MAX. (@ VGS =.
10 V, ID =.
3.0 A) 15.0 ±0.3 12.0 ±0.2 13.5 MIN.
Low Ciss Ciss = 1040 pF TYP.
High Avalanche Capability Ratings.
Isolated TO-220 Package.

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Datasheet Details

Part number	SJ449
Manufacturer	NEC
File Size	148.90 KB
Description	2SJ449
Datasheet	SJ449 Datasheet

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Full PDF Text Transcription (Reference)

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ449 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications. www.DataSheet4U.com PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 3.2 ±0.2 4.5 ±0.2 2.7 ±0.2 FEATURES • Low On-Resistance RDS(on) = 0.8 Ω MAX. (@ VGS = –10 V, ID = –3.0 A) 15.0 ±0.3 12.0 ±0.2 13.5 MIN. • Low Ciss Ciss = 1040 pF TYP. • High Avalanche Capability Ratings • Isolated TO-220 Package ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* VDSS VGSS ID(DC) ID(pulse) –250 m 30 m 6.0 m 24 V V A A W W ˚C A mJ 0.7 ±0.1 2.54 4 ±0.2 3 ±0.1 1.3 ±0.2 1.5 ±0.2 2.54 0.65 ±0.1 2.5 ±0.