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High Power N-Channel Silicon MOSFET For Broadcast / Transmitters NEM0899F01-30
FEATURES
• HIGH OUTPUT POWER: 100 Watts • HIGH GAIN: Linear Gain = 12 dB • LOW INTERMODULATION DISTORTION • HIGH DYNAMIC RANGE • HIGH EFFICIENCY: ηD = 53% • INTERNALLY MATCHED FOR THE 470-860 MHz BAND • PUSH-PULL STRUCTURE
DESCRIPTION
The NEM0899F01-30 is a high power enhancement mode Silicon MOSFET. Its design employs a vertical geometry for high drain to source breakdown voltage, a 1.3 mm x 28.8 mm gate, a gold metallization system, and a plasma silicon nitride layer on the surface of the transistor for long life and reliable operation.
NEM0899F01-30 Datasheet
