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NE850R599A - C-BAND MEDIUM POWER GaAs MESFET

Description

The NE850R599A is a medium power GaAs MESFET designed for up to a 1/2W output stage or as a driver for higher power devices.

The device has no internal matching and can be used at frequencies from UHF to 8.5 GHZ.

Features

  • HIGH OUTPUT POWER: 0.5 W.
  • HIGH LINEAR GAIN: 9.5 dB.
  • HIGH.

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Datasheet Details

Part number NE850R599A
Manufacturer NEC
File Size 19.07 KB
Description C-BAND MEDIUM POWER GaAs MESFET
Datasheet download datasheet NE850R599A Datasheet

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Other Datasheets by NEC

Part Number Description
NE85001 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500100 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500199 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE85002 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500200 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

Full PDF Text Transcription

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C-BAND MEDIUM POWER GaAs MESFET NE850R599A FEATURES • HIGH OUTPUT POWER: 0.5 W • HIGH LINEAR GAIN: 9.5 dB • HIGH EFFICIENCY (PAE): 38% • SUPERIOR INTERMODULATION DISTORTION • INDUSTRY STANDARD PACKAGING OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 99 5.2±0.3 1.0±0.1 4.0 MIN BOTH LEADS Gate φ2.2±0.2 4.0±0.1 Source 4.3±0.2 DESCRIPTION The NE850R599A is a medium power GaAs MESFET designed for up to a 1/2W output stage or as a driver for higher power devices. The device has no internal matching and can be used at frequencies from UHF to 8.5 GHZ. Equivalent performance in a chip package can be obtained by using only 1 cell of the NE8500100 chip. The chips used in this series offer superior reliability and consistent performance for which NEC microwave semiconductors are known. Drain 0.
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