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GENERAL PURPOSE L TO X-BAND GaAs MESFET
FEATURES
• HIGH POWER GAIN: 7 dB TYP at 12 GHz • HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz • LG = 0.8 µm, WG = 330 µm • LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 12 GHz • LOW COST PLASTIC PACKAGE
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NE721S01
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S01
2.0 ± 0.2
2.
1
J
3 0.65 TYP. 1.9 ± 0.2 1.6
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DESCRIPTION
The NE721S01 is a low cost 0.8 µm recessed gate GaAs MESFET, suitable for both amplifier and oscillator applications. Larger gate geometry make this device ideal for second and third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The NE721S01 is fabricated with an epitaxial process resulting in excellent phase noise in oscillator applications up to 14 GHz.
NE721S01 Datasheet
