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NE71300-L - L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

Features

  • x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm.

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Datasheet Details

Part number NE71300-L
Manufacturer NEC
File Size 92.34 KB
Description L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
Datasheet download datasheet NE71300-L Datasheet

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Full PDF Text Transcription

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DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION PART NUMBER NE71300-N NE71300-M NE71300-L NE71383B I DSS (mA) 20 to 50 50 to 80 80 to 120 20 to 120 83B PACKAGE CODE 00 (CHIP) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGSO VGDO ID Ptot Tch Tstg 5.0 ð5.0 ð6.
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