NE650R479A Datasheet PDF - NEC 0.4 W L / S-BAND POWER GaAs MES FET Specs

NE650R479A - 0.4 W L / S-BAND POWER GaAs MES FET

Datasheet Summary

Description

The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems.

Features

High Output Power.
High Linear Gain : PO (1 dB) = +26 dBm typ. : 14 dB typ.
High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 100 mA, f = 1.9 GHz.

Datasheet Details

Part number	NE650R479A
Manufacturer	NEC
File Size	79.45 KB
Description	0.4 W L / S-BAND POWER GaAs MES FET
Datasheet	NE650R479A Datasheet
Additional preview pages of the NE650R479A datasheet.

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Full PDF Text Transcription

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PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE650R479A 0.4 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. FEATURES • High Output Power • High Linear Gain : PO (1 dB) = +26 dBm typ. : 14 dB typ. • High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 100 mA, f = 1.

Published: May 7, 2005 |