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NDL5522P - InGaAs AVALANCHE PHOTO DIODE

Description

amplifier IC.

It is designed as an optical receiver for fiber optic communications systems such as SDH, SONET, digital video transmission.

It is designed for STM-16 applications.

Features

  • Internal Si pre-amplifier IC.
  • High sensitivity P =.
  • 33 dBm TYP. @ 2.5 Gb/s, NRZ.
  • Wide dynamic range Dr = 24 dB TYP. @ 2.5 Gb/s, NRZ.
  • Output impedance 50 Ω.
  • Transimpedance 300 Ω.
  • Detecting area size φ 50 µm.
  • GI-50/125 multimode fiber pigtail.
  • Hermetically sealed 6-pin butterfly package 2.8 2.54 #3 26.0 0.51 #1.

📥 Download Datasheet

Datasheet Details

Part number NDL5522P
Manufacturer NEC
File Size 119.49 KB
Description InGaAs AVALANCHE PHOTO DIODE
Datasheet download datasheet NDL5522P Datasheet

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Full PDF Text Transcription

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DATA SHEET RECEIVER NDL5522P φ 50 µm InGaAs AVALANCHE PHOTO DIODE FOR 2.5 Gb/s BUTTERFLY MODULE WITH INTERNAL PRE-AMPLIFIER 8.9Discon1.0MIN.tinued 0.9 6.0 12.7 Product DESCRIPTION The NDL5522P is an InGaAs avalanche photo diode module with multimode fiber incorporating a silicon pre- amplifier IC. It is designed as an optical receiver for fiber optic communications systems such as SDH, SONET, digital video transmission. It is designed for STM-16 applications. FEATURES • Internal Si pre-amplifier IC • High sensitivity P = –33 dBm TYP. @ 2.5 Gb/s, NRZ • Wide dynamic range Dr = 24 dB TYP. @ 2.5 Gb/s, NRZ • Output impedance 50 Ω • Transimpedance 300 Ω • Detecting area size φ 50 µm • GI-50/125 multimode fiber pigtail • Hermetically sealed 6-pin butterfly package 2.8 2.
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