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K3296 - MOSFET

General Description

The 2SK3296 is N-Channel MOS FET device that

Key Features

  • a low on-state resistance and excellent switching characteristics, designed for low voltage high current.

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Full PDF Text Transcription for K3296 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K3296. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3296 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3296 is N-Channel MOS FET device th...

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INDUSTRIAL USE DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3296 2SK3296-S 2SK3296-ZK 2SK3296-ZJ PACKAGE TO-220AB TO-262 TO-263(MP-25ZK) TO-263(MP-25ZJ) FEATURES • 4.5 V drive available • Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 18 A) • Low gate charge QG = 30 nC TYP.