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K2723 - 2SK2723

General Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications.

Low On-Resistance RDS (on) 1 = 40mΩ Max.

(VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mΩ Max.

(VGS = 4 V, ID = 13 A) Ciss = 830 pF Typ.

Key Features

  • 2.5 ± 0.1 0.65 ± 0.1 1.Gate 2.Drain 3.Source 1 2 3 MP-45F (.

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Full PDF Text Transcription for K2723 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K2723. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET MOS Field Effect Power Transistors 2SK2723 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS (in millimeter) 10.0 ± 0.3 3.2 ± 0.2 4.5 ± 0.2 2...

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SE PACKAGE DIMENSIONS (in millimeter) 10.0 ± 0.3 3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications. www.DataSheet4U.com 15.0 ± 0.3 3 ± 0.1 4 ± 0.2 • Low On-Resistance RDS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mΩ Max. (VGS = 4 V, ID = 13 A) Ciss = 830 pF Typ. • Low Ciss • Built-in G-S Protection Diode • Isolated TO-220 Package 0.7 ± 0.1 2.54 1.3 ± 0.2 1.5 ± 0.2 2.54 13.5MIN. 12.0 ± 0.2 FEATURES 2.5 ± 0.1 0.65 ± 0.1 1.Gate 2.Drain 3.

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