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K2462 - 2SK2462

General Description

signed for high current switching applications.

Key Features

  • Low On-Resistance RDS(on)1 = 0.14 Ω MAX. (@ VGS = 10 V, ID = 8.0 A) RDS(on)2 = 0.17 Ω MAX. (@ VGS = 4 V, ID = 8.0 A).
  • Low Ciss Ciss = 790 pF TYP.
  • Built-in G-S Gate Protection Diodes.
  • High Avalanche Capability Ratings 15.0 ±0.3 3 ±0.1.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
K2461 2SK2461
K2411 2SK2411
K2414 2SK2414
K2415 2SK2415
K2480 2SK2480
K2481 2SK2481
K2485 2SK2485
K2487 2SK2487
K2488 2SK2488
K2499 2SK2499

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2462 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2462 is N-Channel MOS Field Effect Transistor de- signed for high current switching applications. FEATURES • Low On-Resistance RDS(on)1 = 0.14 Ω MAX. (@ VGS = 10 V, ID = 8.0 A) RDS(on)2 = 0.17 Ω MAX. (@ VGS = 4 V, ID = 8.0 A) • Low Ciss Ciss = 790 pF TYP. • Built-in G-S Gate Protection Diodes • High Avalanche Capability Ratings 15.0 ±0.3 3 ±0.1 PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 13.5 MIN. 12.0 ±0.2 4 ±0.