Datasheet4U Logo Datasheet4U.com

K2141 - SWITCHING N-CHANNEL POWER MOSFET

General Description

The 2SK2141 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications.

Key Features

  • 10.0 ± 0.3.
  • φ3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 Low On-state Resistance RDS(on) = 1.1 Ω MAX. (VGS = 10 V, ID = 3.0 A) 15.0 ± 0.3 LOW Ciss Ciss = 1150 pF TYP. 3 ± 0.1 1 2 3 4 ± 0.2 High Avalanche Capability Ratings Isolated TO-220 (MP-45F) Package Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) VDSS VGSS ID (DC) ID (pulse).
  • 600 ± 30 ± 6.0 ± 24 35 2.0.
  • 55 to +150 150 6.0 12 V V A A W W °C °C A mJ 1 2.

📥 Download Datasheet

Full PDF Text Transcription for K2141 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K2141. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2141 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2141 is N-channel Power MOS Field Effect Transistor des...

View more extracted text
RIPTION The 2SK2141 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) FEATURES 10.0 ± 0.3 • • • • φ3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 Low On-state Resistance RDS(on) = 1.1 Ω MAX. (VGS = 10 V, ID = 3.0 A) 15.0 ± 0.3 LOW Ciss Ciss = 1150 pF TYP. 3 ± 0.1 1 2 3 4 ± 0.2 High Avalanche Capability Ratings Isolated TO-220 (MP-45F) Package Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) VDSS VGSS ID (DC) ID (pulse)* 600 ± 30 ± 6.0 ± 24 35 2.0 –55 to +150 150 6.0 12 V V A A W W °C °C A mJ 1 2 3 2.54 TYP. 0.7 ± 0.1 13

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
K2140 N-Channel Power MOSFET
K2111 2SK2111
K2131 2SK2131
K2132 2SK2132
K2134 2SK2134
K2135 2SK2135
K2136 2SK2136
K2137 2SK2137
K2139 MOS Field Effect Transistor