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K1398 - 2SK1398

General Description

designed for a high-speed switching device in digital circuits.

suitable for applications including headphone stereos which need power saving.

Key Features

  • Directly driven by ICs having a 3-V power supply.
  • Not necessary to consider driving current because of its high input impedance.
  • Possible to reduce the number of parts by omitting the bias resistor.
  • Can be used complementary with the 2SJ184.

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Full PDF Text Transcription for K1398 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K1398. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1398 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING 5 DESCRIPTION The 2SK1398 is N-channel MOS Field Effect Transistor designed for ...

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ION The 2SK1398 is N-channel MOS Field Effect Transistor designed for a high-speed switching device in digital circuits. The 2SK1398 is driven by a 2.5-V power source, it is suitable for applications including headphone stereos which need power saving. ORDERING INFORMATION PART NUMBER PACKAGE 2SK1398 SST FEATURES • Directly driven by ICs having a 3-V power supply. • Not necessary to consider driving current because of its high input impedance. • Possible to reduce the number of parts by omitting the bias resistor. • Can be used complementary with the 2SJ184.

More Datasheets from NEC (now Renesas Electronics)

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