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J598 - 2SJ598

Datasheet Summary

Description

The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

Features

  • Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 6 A) RDS(on)2 = 190 mΩ MAX. (VGS =.
  • 4.0 V, ID =.
  • 6 A).
  • Low Ciss: Ciss = 720 pF TYP.
  • Built-in gate protection diode.
  • TO-251/TO-252 package.

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Datasheet Details

Part number J598
Manufacturer NEC
File Size 187.61 KB
Description 2SJ598
Datasheet download datasheet J598 Datasheet
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DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ598 2SJ598-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEATURES • Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A) • Low Ciss: Ciss = 720 pF TYP. • Built-in gate protection diode • TO-251/TO-252 package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 (TO-251) –60 m20 m12 m30 23 1.0 150 –55 to +150 –12 14.
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