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3SK135A - N-Channel MOSFET

Key Features

  • Suitable for use as RF amplifier in UHF TV tuner.
  • Low Crss : 0.02 pF TYP.
  • High Gps : 18 dB TYP.
  • Low NF : 2.7 dB TYP.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High Gps : 18 dB TYP. • Low NF : 2.7 dB TYP. PACKAGE DIMENSIONS in millimeters 0.4+0.1 –0.05 2 2.8+0.2 –0.3 1.5+0.2 –0.1 –0.06 0.16 +0.1 Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDSX VG1S* VG2S* ID PT Tch Tstg 5˚ 0 to 0.1 20 ± 10 ± 10 25 200 150 –65 to +150 *RL ≥ 10 kΩ V V V mA mW ˚ C ˚ C 1 0.6+0.1 –0.05 5˚ +0.1 5˚ 0.4–0.05 +0.2 1.1–0.1 0.8 4 (1.9) 1. Source 2. Drain 3. Gate 2 4. Gate 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) 2.9±0.