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2SK3358 - N-Channel MOSFET

General Description

The 2SK3358 is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low on-state resistance RDS(on)1 = 30 mΩ MAX. (VGS = 10 V, ID = 28 A) 5 5 RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 20 A).
  • Low Ciss: Ciss = 3200 pF TYP.
  • Built-in gate protection diode (TO-220AB).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3358 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3358 2SK3358-S 2SK3358-Z PACKAGE TO-220AB TO-262 TO-220SMD DESCRIPTION The 2SK3358 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 30 mΩ MAX. (VGS = 10 V, ID = 28 A) 5 5 RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 20 A) • Low Ciss: Ciss = 3200 pF TYP.