Datasheet4U Logo Datasheet4U.com

2SK2488 - N-Channel MOSFET

General Description

The 2SK2488 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

Key Features

  • RDS (on) = 1.2 Ω (VGS = 10 V, ID = 5.0 A) 1.0.
  • Low On-Resistance.
  • Low Ciss Ciss = 2 900 pF TYP.
  • High Avalanche Capability Ratings.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2480 MOS FIELD EFFECT TRANSISTOR Renesas
2SK2481 MOS Field Effect Transistors Kexin
2SK2484 MOS Field Effect Transistors Kexin
2SK2484 N-Channel 900V Power MOSFET VBsemi
2SK2484 N-CHANNEL POWER MOSFET Renesas

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK2480 N-Channel MOSFET
2SK2481 N-Channel MOSFET
2SK2482 N-Channel MOSFET
2SK2483 N-Channel MOSFET
2SK2484 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2488 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2488 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES RDS (on) = 1.2 Ω (VGS = 10 V, ID = 5.0 A) 1.0 • Low On-Resistance • Low Ciss Ciss = 2 900 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID (DC) ID (pulse) PT1 PT2 Tch Tstg IAS EAS 900 ± 30 ± 10 ± 20 150 3.