2SJ687 Datasheet PDF - NEC MOS FIELD EFFECT TRANSISTOR Specs

2SJ687 - MOS FIELD EFFECT TRANSISTOR

Datasheet Summary

Description

The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.

Features

Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS =.
4.5 V, ID =.
10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS =.
3.0 V, ID =.
10 A) RDS(on)3 = 20 mΩ MAX. (VGS =.
2.5 V, ID =.
10 A).
2.5 V drive available.
Avalanche capability ratings.

Datasheet Details

Part number	2SJ687
Manufacturer	NEC
File Size	196.75 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	2SJ687 Datasheet
Additional preview pages of the 2SJ687 datasheet.

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A) RDS(on)3 = 20 mΩ MAX. (VGS = −2.5 V, ID = −10 A) • 2.5 V drive available • Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SJ687-ZK-E1-AY 2SJ687-ZK-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel PACKAGE TO-252 (MP-3ZK) 0.27 g TYP. Note Pb-free (This product does not contain Pb in external electrode.

Published: Sep 4, 2007 |