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DATA SHEET PRELIMINARY DATA SHEET
Silicon Transistor
2SA1977
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
FEATURES
•
PACKAGE DIMENSION (in millimeters)
_0.2 2.8+
0.4 +0.1 –0.05
High fT fT = 8.5 GHz TYP. High gain | S21e | = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA
2
1.5
0.65 +0.1 –0.15
•
0.95
• •
Equivalent NPN transistor is the 2SC3583.
_0.2 2.9+
High-speed switching characterstics
2
0.95
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
Symbol VCB0 VCE0 VEB0 IC PT Tj Tstg
Rating −20 −12 −3.0 −50 200 150 −65 to +150
Unit V V V mA mW °C °C
1.1 to 1.4 0.3
Marking
0.16 +0.1 –0.
2SA1977 Datasheet
