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2SA1836 - PNP SILICON EPITAXIAL TRANSISTOR

General Description

The 2SA1836 is PNP silicon epitaxial transistor.

0.05

Key Features

  • 1.6 ± 0.1 0.8 ± 0.1.
  • High DC current gain: hFE2 = 200 TYP.
  • High voltage: VCEO =.
  • 50 V 3 0 to 0.1 2 0.2 +0.1.
  • 0 0.5 0.5 1.0 1.6 ± 0.1 0.6 0.75 ± 0.05 1.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SA1836 PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SA1836 is PNP silicon epitaxial transistor. PACKAGE DRAWING (Unit: mm) 0.3 ± 0.05 0.1 +0.1 –0.05 FEATURES 1.6 ± 0.1 0.8 ± 0.1 • High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = −50 V 3 0 to 0.1 2 0.2 +0.1 –0 0.5 0.5 1.0 1.6 ± 0.1 0.6 0.75 ± 0.05 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Note1 Note2 VCBO VCEO VEBO IC(DC) IC(pulse) PT Tj Tstg −60 −50 −5.0 −100 −200 200 150 –55 to + 150 V V V mA mA mW °C °C Total Power Dissipation (TA = 25°C) Junction Temperature Storage Temperature Range 1: Emitter 2: Base 3: Collector Notes 1.