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23C32340GZ - UPD23C32340GZ

Description

The µPD23C32340 and µPD23C32380 are 33,554,432 bits mask-programmable ROM.

The word organization is selectable (BYTE mode : 4,194,304 words by 8 bits, WORD mode : 2,097,152 words by 16 bits).

The active levels of OE (Output Enable Input) can be selected with mask-option.

Features

  • Pin compatible with NOR Flash Memory.
  • Word organization 4,194,304 words by 8 bits (BYTE mode) 2,097,152 words by 16 bits (WORD mode).
  • Page access mode BYTE mode : 8 byte random page access (µPD23C32340) 16 byte random page access (µPD23C32380) WORD mode : 4 word random page access (µPD23C32340) 8 word random page access (µPD23C32380).
  • Operating supply voltage : VCC = 2.7 V to 3.6 V Operating supply voltage VCC 3.0 V ± 0.3 V 3.3 V ± 0.3 V Access time / Page ac.

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Datasheet Details

Part number 23C32340GZ
Manufacturer NEC
File Size 313.91 KB
Description UPD23C32340GZ
Datasheet download datasheet 23C32340GZ Datasheet

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Full PDF Text Transcription

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DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32340, 23C32380 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C32340 and µPD23C32380 are 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 4,194,304 words by 8 bits, WORD mode : 2,097,152 words by 16 bits). The active levels of OE (Output Enable Input) can be selected with mask-option. The µPD23C32340 and µPD23C32380 are packed in 48-pin PLASTIC TSOP(I) and 48-pin TAPE FBGA.
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