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K3572. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3572 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3572 is N-channel MOS FET device that features a low on-state resistan...
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3572 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 5 ORDERING INFORMATION PART NUMBER 2SK3572 2SK3572-S 2SK3572-ZK 2SK3572-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES • 4.5 V drive available • Low on-state resistance RDS(on)1 = 5.7 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low gate charge QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 80 A) • Built-in gate protection diode • Surface mount device available Note TO-220SMD package is produced only in Japan.
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K3572 Datasheet
