Datasheet4U Logo Datasheet4U.com

NCE75ED120BT - 1200V 75A Trench FS Gen.7 IGBT

Datasheet Summary

Description

Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation;

Features

  • Trench Field Stop Gen.7 Technology Offering.
  • Low saturation voltage: VCEsat = 1.65V(Typ. ) @ IC = 75 A.
  • High speed switching，low switching losses.
  • Maximum junction temperature Tvjmax = 175°C.
  • Tighten parameter distribution.
  • High ruggedness, temperature stable behavior.
  • Pb-free lead plating; RoHS compliant.

📥 Download Datasheet

Datasheet preview – NCE75ED120BT

Datasheet Details

Part number NCE75ED120BT
Manufacturer NCE Power
File Size 1.49 MB
Description 1200V 75A Trench FS Gen.7 IGBT
Datasheet download datasheet NCE75ED120BT Datasheet
Additional preview pages of the NCE75ED120BT datasheet.

📁 Similar Datasheet

  • NCE75H21D - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
  • NCE75H21TB - N-Channel MOSFET (VBsemi)
  • NCE75H35TC - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
  • NCE70N100I - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
  • NCE70R180 - N-Channel Super Junction Power MOSFET (NCE Power Semiconductor)
  • NCE70R180F - N-Channel Super Junction Power MOSFET (NCE Power Semiconductor)
  • NCE70R1K2 - N-Channel Super Junction Power MOSFET (NCE Power Semiconductor)
  • NCE70R1K2D - N-Channel Super Junction Power MOSFET (NCE Power Semiconductor)
  • NCE70R1K2F - N-Channel Super Junction Power MOSFET (NCE Power Semiconductor)
  • NCE70R1K2I - N-Channel Super Junction Power MOSFET (NCE Power Semiconductor)
Other Datasheets by NCE Power
  • NCE7559K - NCE N-Channel Enhancement Mode Power MOSFET
  • NCE7560K - NCE N-Channel Enhancement Mode Power MOSFET
  • NCE7578 - NCE N-Channel Enhancement Mode Power MOSFET
  • NCE7580 - NCE N-Channel Enhancement Mode Power MOSFET
  • NCE7580D - NCE N-Channel Enhancement Mode Power MOSFET
  • NCE7580T - NCE N-Channel Enhancement Mode Power MOSFET
  • NCE75H11 - NCE N-Channel Enhancement Mode Power MOSFET
  • NCE75H14 - NCE N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
NCE75ED120BT 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench Field Stop Gen.7 Technology Offering  Low saturation voltage: VCEsat = 1.65V(Typ.
Published: |