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NCEP15T14D - N-Channel Power MOSFET

General Description

The NCEP15T14D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Key Features

  • VDS =150V,ID =140A RDS(ON)=5.6mΩ , typical @ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.

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Datasheet Details

Part number NCEP15T14D
Manufacturer NCE Power Semiconductor
File Size 310.51 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NCEP15T14D Datasheet

Full PDF Text Transcription for NCEP15T14D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCEP15T14D. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com NCEP15T14D NCE N-Channel Super Trench Power MOSFET Description The NCEP15T14D uses Super Trench technology that is uniquely optimized to provide t...

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D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =150V,ID =140A RDS(ON)=5.

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