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NCE65T680I - N-Channel Super Junction Power MOSFET

Description

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge.

This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

Features

  • New technology for high voltage device.
  • Low on-resistance and low conduction losses.
  • Small package.
  • Ultra Low Gate Charge cause lower driving requirements.
  • 100% Avalanche Tested.
  • ROHS compliant VDS RDS(ON)TYP ID 650 600 7 V mΩ A.

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Datasheet Details

Part number NCE65T680I
Manufacturer NCE Power Semiconductor
File Size 487.83 KB
Description N-Channel Super Junction Power MOSFET
Datasheet download datasheet NCE65T680I Datasheet

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Full PDF Text Transcription

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NCE65T680I，NCE65T680K N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
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