NCE3415Y - P-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

Part number	NCE3415Y
Manufacturer	NCE Power Semiconductor
File Size	253.14 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3415Y Datasheet
Additional preview pages of the NCE3415Y datasheet.

The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V.

VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V ESD Rating: 2500V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface mount package Schematic diagram Marking and pin Assignment.

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Published: Jun 2, 2018 |