NCE3406AN Datasheet PDF - NCE Power Semiconductor N-Channel Enhancement Mode Power MOSFET Specs

NCE3406AN - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The NCE3406AN uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

VDS = 30V,ID = 6A RDS(ON) < 55mΩ @ VGS=2.5V RDS(ON) < 39mΩ @ VGS=4.5V RDS(ON) < 33mΩ @ VGS=10V Schematic diagram.
High power and current handing capability.
Lead free product is acquired.
Surface mount package Marking and pin assignment.
PWM.

Datasheet Details

Part number	NCE3406AN
Manufacturer	NCE Power Semiconductor
File Size	267.74 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3406AN Datasheet
Additional preview pages of the NCE3406AN datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com NCE3406AN NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3406AN uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 6A RDS(ON) < 55mΩ @ VGS=2.5V RDS(ON) < 39mΩ @ VGS=4.

Published: Oct 26, 2024 |