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NCE30H32WD - N-Channel Enhancement Mode Power MOSFET

Description

The NCE30H32WD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =30V ,ID =320A RDS(ON) < 1.6mΩ @ VGS=10V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram.

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Datasheet preview – NCE30H32WD

Datasheet Details

Part number NCE30H32WD
Manufacturer NCE Power Semiconductor
File Size 344.84 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE30H32WD Datasheet
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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE30H32WD NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H32WD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V ,ID =320A RDS(ON) < 1.
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