• Part: NCE1507IA
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 295.09 KB
Download NCE1507IA Datasheet PDF
NCE Power Semiconductor
NCE1507IA
Description The NCE1507IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS = 150V,ID = 7A RDS(ON) < 290mΩ @ VGS=10V (Typ:255mΩ) - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Excellent package for good heat dissipation S Schematic diagram Application - Power switching application - Hard switched and high frequency circuits Marking and pin assignment TO-251 top view Package Marking and Ordering Information Device Marking Device Device Package TO-251 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ,TSTG Limit 150 ±20 7...