• Part: NCE0157T
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 340.42 KB
Download NCE0157T Datasheet PDF
NCE Power Semiconductor
NCE0157T
DESCRIPTION The NCE0157T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES - VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V (Typ:11.7mΩ) - Special process technology for high ESD capability - High density cell design for ultra low Rdson - Fully characterized Avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Schematic diagram Application - Power switching application - Hard Switched and High Frequency Circuits - Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-247 top view Package Marking And Ordering Information Device Marking Device Device Package TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Parameter Symbol VDS VGS Drain...