1N3288 - (1N3288 - 1N3297) SILICON POWER DIODE

NAINA SEMICONDUCTOR

Key Features

Diffused Series.
Available in Normal & Reverse Polarity.
Industrial Grade.
Available In Avalanche Characteristic.

1N3288 (1n3288 - 1n3297) silicon power diode by NAINA SEMICONDUCTOR - Datasheet Preview

Datasheet Details

Part number	1N3288
Manufacturer	NAINA SEMICONDUCTOR
File Size	109.67 KB
Description	(1N3288 - 1N3297) SILICON POWER DIODE
Datasheet	1N3288 Datasheet

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Other Datasheets by NAINA SEMICONDUCTOR

Part Number	Description
1N3289	(1N3288 - 1N3297) SILICON POWER DIODE
1N3290	(1N3288 - 1N3297) SILICON POWER DIODE
1N3291	(1N3288 - 1N3297) SILICON POWER DIODE
1N3292	(1N3288 - 1N3297) SILICON POWER DIODE
1N3293	(1N3288 - 1N3297) SILICON POWER DIODE
1N3294	(1N3288 - 1N3297) SILICON POWER DIODE
1N3295	(1N3288 - 1N3297) SILICON POWER DIODE
1N3296	(1N3288 - 1N3297) SILICON POWER DIODE
1N3297	(1N3288 - 1N3297) SILICON POWER DIODE
1N3000B	ZENER DIODES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1N3288-1N3297 SILICON POWER DIODE DO - 8 FEATURES • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1250C Maximum peak forward voltage drop @ Rated IF(AV) Maximum peak one cycle (non-rep) surge current 10 m sec Maximum peak repetitive surge current Maximum I2t rating (non-rep.) for 5 to 10 msec. 100A 1.5V 2200A 500 A 24000 A2 Sec NAINA THERMAL MECHANICAL SPECIFICATIONS θ JC Tj Tstg W www.DataSheet4U.com Maximum thermal resistance Junction to case Operating Junction Temp. Storage temperature Mounting torque (Non-lubricated threads) Approx, weight 0.400C/W -650C to 1500C -65 0C to 2000C 2.0 M-kg min, 3.0 M-kg max 150 gms.