Description
This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology.
This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
- - N-Channel: 20V 3.5A
RDS(on)Typ=34.5mΩ@VGS = 4.5 V RDS(on))Typ= 46mΩ@VGS = 2.5V - Very Low On-resistance RDS(ON) - Low Crss
- Fast switching
- Improved dv/dt capability
D
SOT-23
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
ID
IDM VGSS PD R θJA TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current - Continuous (TC = 25℃)
- Continuous (TC = 70℃)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Power Dissipation (TC = 25℃)
Thermal Resistance, Juncti.