Datasheet Details
| Part number | SLD90N10G |
|---|---|
| Manufacturer | Msemitek |
| File Size | 964.05 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
 SLD90N10G Datasheet
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General Description
This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- - N-Channel:100V 90A RDS(on)Typ= 6.2mΩ@VGS = 10 V RDS(on)Typ= 8.6mΩ@VGS = 4.5V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S D-PAK D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD R θJC TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche.