P2N5551 - AMPLIFIER TRANSISTORS

Motorola Semiconductor (now NXP Semiconductors)

Download the P2N5551 datasheet PDF. This datasheet also covers the P2N5550 variant, as both devices belong to the same amplifier transistors family and are provided as variant models within a single manufacturer datasheet.

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P2N5551 amplifier transistors by Motorola Semiconductor (now NXP Semiconductors) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (P2N5550-Motorola.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	P2N5551
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	49.08 KB
Description	AMPLIFIER TRANSISTORS
Datasheet	P2N5551 Datasheet

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
P2N5550	AMPLIFIER TRANSISTORS
P2N2222	AMPLIFIER TRANSISTORS
P2N2907	AMPLIFIER TRANSISTORS
P2N3019	ONE WATT AMPLIFIER TRANSISTORS
P2N3020	ONE WATT AMPLIFIER TRANSISTORS
P2N4031	ONE WATT AMPLIFIER TRANSISTORS
P2N4033	ONE WATT AMPLIFIER TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

T P2N5550 P2N5551 CASE 29-02, STYLE 17 TO-92 (TO-226AA) AMPLIFIER TRANSISTORS NPN SILICON Refer to 2N5550 for graphs. MAXIMUM RATINGS Rating Symbol 2N 2N 5550 5551 Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation T/ = 25°C Derate above 25°C Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS VCEO VCBO VEBO ic PD pd Tj, st g 140 160 160 180 6.0 600 625 5.0 1.5 12 -55 to +150 Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Rfjjc 83.