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MRF6408 - RF POWER TRANSISTOR

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Part Number Description
MRF6401 RF LINEAR POWER TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6408/D NPN Silicon RF Power Transistor Designed for PCN and PCS base station applications, the MRF6408 incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. • To be used in class AB for PCN–PCS / Cellular Radio • Specified 26 Volts, 1.88 GHz Characteristics Output Power = 12 Watts CW Typical Gain = 8.8 dB Typical Efficiency = 42% • Specified 26 Volts, 1.99 GHz Characteristics Output Power = 12 Watts CW Typical Gain = 8.3 dB Typical Efficiency = 39% • Circuit Board Photomaster Available by Ordering Document MRF6408PHT/D from Motorola Literature Distribution. MRF6408 12 W, 2.