MRF18085BR3 - RF Power Field Effect Transistors

Motorola Semiconductor (now NXP Semiconductors)

Key Features

ormation On This Product, Go to: www. freescale. com.

MRF18085BR3 rf power field effect transistors by Motorola Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MRF18085BR3
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	610.58 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF18085BR3 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MRF18085ALSR3	RF Power Field Effect Transistors	Freescale Semiconductor
MRF18085AR3	RF Power Field Effect Transistors	Freescale Semiconductor
MRF18030BLR3	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs	Freescale Semiconductor
MRF18030BLSR3	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs	Freescale Semiconductor
MRF18060ALR3	RF Power Field Effect Transistors	Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
MRF18085BLSR3	RF Power Field Effect Transistors
MRF18085A	RF Power Field Effect Transistor
MRF18085ALSR3	RF Power Field Effect Transistor
MRF18085AR3	RF Power Field Effect Transistor
MRF18030ALR3	RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF18085B/D The RF MOSFET Line RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain - 12.