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MRF176GU - N-CHANNEL MOS BROADBAND RF POWER FET

Key Features

  • e transfer (Crss) capacitances on data sheets. The relationships between the inter.
  • terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF.

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Part Number Description Manufacturer
MRF176GU The RF MOSFET MACOM

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF176GU/D The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance MRF176GU @ 50 V, 400 MHz (“U” Suffix) Output Power — 150 Watts Power Gain — 14 dB Typ Efficiency — 50% Typ MRF176GV @ 50 V, 225 MHz (“V” Suffix) Output Power — 200 Watts Power Gain — 17 dB Typ Efficiency — 55% Typ • 100% Ruggedness Tested At Rated Output Power • Low Thermal Resistance • Low Crss — 7.