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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF160/D
The RF MOSFET Line
Power Field Effect Transistor
N–Channel Enhancement–Mode MOSFET
• Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50% • Excellent Thermal Stability, Ideally Suited for Class A Operation • Facilitates Manual Gain Control, ALC and Modulation Techniques • 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR • Low Crss – 0.8 pF Typical at VDS = 28 Volts Designed primarily for wideband large–signal output and driver from 30–500 MHz.
MRF160
4.0 W, to 400 MHz MOSFET BROADBAND RF POWER FET
CASE 249–06, STYLE 3
D
G S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain–Gate Voltage Drain–Gate Voltage (RGS = 1.
MRF160 Datasheet
