Datasheet4U Logo Datasheet4U.com

MMBT6429 - AMPLIFIER TRANSISTOR

Download the MMBT6429 datasheet PDF. This datasheet also covers the MMBT6428 variant, as both devices belong to the same amplifier transistor family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MMBT6428-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MMBT6429 NPN Transistor Samsung
MMBT6429LT1 NPN Transistor ON
MMBT6429LT1G Amplifier Transistors ON Semiconductor
MMBT6427 NPN Transistor National Semiconductor
MMBT6427 NPN Transistor Samsung

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MMBT6429LT1 Amplifier Transistors
MMBT6427 DARLINGTON TRANSISTOR
MMBT6427LT1 Darlington Transistor
MMBT6428 AMPLIFIER TRANSISTOR
MMBT6428LT1 Amplifier Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MMBT6428,29 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) AMPLIFIER TRANSISTOR NPN SILICON Refer to MPSA18 for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol v CEO v CBO VEBO ic Value MMBT6428 MMBT6429 50 45 60 55 6.0 200 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic *Total Device Dissipation, Ta = 25°C Derate above 25°C Symbol PD Storage Temperature Tstg Thermal Resistance Junction to Ambient R ftJA 'Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Max 350 2.8 150 357 Unit mW mW/°C °C °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (IC = 10 mAdc, Bl = 0) dC = 1.