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MJ16018 - Power Transistors

Key Features

  • Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits.
  • Collector.
  • Emitter Voltage.
  • VCEV = 1500 Vdc.
  • Fast Turn.
  • Off Times 80 ns Inductive Fall Time.
  • 100_C (Typ) 110 ns Inductive Crossover Time.
  • 100_C (Typ) 4.5 µs Inductive Storage Time.
  • 100_C (Typ).
  • 100_C Performance Specified for: Reverse.
  • Biased SOA with Inductive Lo.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ16018/D Designer's NPN Silicon Power Transistors 1.5 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. Typical Applications: Features: • • • • • • Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits • Collector–Emitter Voltage — VCEV = 1500 Vdc • Fast Turn–Off Times 80 ns Inductive Fall Time — 100_C (Typ) 110 ns Inductive Crossover Time — 100_C (Typ) 4.