implanted arsenic emitter transistors with an all gold metallization system.
Supply Voltage = 24 Vdc 5th Generation Die Technology Specified for 110 Channel Performance Power Gain = 14.5 dB max @ f = 50 MHz Superior Gain, Return Loss and DC Current Stability All Gold Metallization
MHW7142
24 Vdc 750 MHz 110.
Full PDF Text Transcription for MHW7142 (Reference)
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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MHW7142/D 750 MHz CATV Conventional Hybrid Amplifier Designed specifically for 750 MHz CATV appli...
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entional Hybrid Amplifier Designed specifically for 750 MHz CATV applications. Features ion–implanted arsenic emitter transistors with an all gold metallization system. • • • • • • Supply Voltage = 24 Vdc 5th Generation Die Technology Specified for 110 Channel Performance Power Gain = 14.
More Datasheets from Motorola Semiconductor (now NXP Semiconductors)
MHW7142 Datasheet
