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MHW1134 - Low Distortion Wideband Amplifiers

Key Features

  • all gold metallization system.
  • Guaranteed Broadband Power Gain @ f = 5.0.
  • 200 MHz.
  • Guaranteed Broadband Noise Figure @ f = 5.0.
  • 175 MHz.
  • Superior Gain, Return Loss and DC Current Stability with Temperature.
  • All Gold Metallization.
  • All Ion.
  • Implanted Arsenic Emitter Transistor Chips with 6.0 GHz fT’s.
  • Circuit Design Optimized for Good RF Stability Under High VSWR Load Conditions.
  • Transformers Designed to Insure.

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Full PDF Text Transcription for MHW1134 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MHW1134. For precise diagrams, and layout, please refer to the original PDF.

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MHW1134/D Low Distortion Wideband Amplifiers . . . designed specifically for broadband applicatio...

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deband Amplifiers . . . designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and high–split 2–way cable TV systems. Features all gold metallization system. • Guaranteed Broadband Power Gain @ f = 5.0– 200 MHz • Guaranteed Broadband Noise Figure @ f = 5.0– 175 MHz • Superior Gain, Return Loss and DC Current Stability with Temperature • All Gold Metallization • All Ion–Implanted Arsenic Emitter Transistor Chips with 6.

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