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MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C Total Device Dissipation
@ TC = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol VCEO VCBO vebo
ic
PD
Pd
TJ- Tstg
Value
15
30
3.0
50
Each Transistor
Total Device
0.65 3.72
1.9 10.88
1.3 7.43
4.6 26.3
-65 to +200
Unit Vdc Vdc Vdc
mAdc
Watts mW/°C
Watts mW/°C
°C
MHQ918
CASE 632-02, STYLE 1
TO-116
QUAD
AMPLIFIER TRANSISTOR
NPN SILICON
Refer to MD918 for graphs.
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage! 1) (IC = 3.0 mAdc, Bl = 0)
Collector-Base Breakdown Voltage dC = 1.
MHQ918 Datasheet
