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MFE9200 - N-CHANNEL TMOS SWITCHING FET

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MFE9200 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Drain Current Continuous (1) Pulsed (2) Total Device Dissipation (a Jq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vDs Vgs id 'dm pd TJ. Tstg Value 200 ±20 400 800 1.8 14.4 - 55 to + 1 50 Unit Vdc Vdc mAdc Watts mW/°C °C CASE 22-03, STYLE 12 TO-18 (TO-206AA) TMOS SWITCHING —N-CHANNEL ENHANCEMENT ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.; Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (vG s = Do, i = 10 mA) Gate Reverse Current (VGS = 15 Vdc. V DS = . 0) ON CHARACTERISTICS* Zero-Gate-Voltage Drain Current' (V DS = 200 V, V GS = 0) Gate Threshold Voltage (VqS = VGS' D] = '.
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