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MBR5825 - POWER RECTIFIERS

Key Features

  • epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity-protection diodes.
  • Extremely Low vF.
  • High Surge Capacity.
  • Low Stored Charge, Majority.
  • TX Version Available.
  • Carrier Conduction Low Power Loss/ High Efficiency Designer's Data for ~'Worst Case" Conditions The Designers Data sheets permit the design of most.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MBR5825H POWER RECTIFIERS
MBR5825H1 POWER RECTIFIERS
MBR5831 POWER RECTIFIERS
MBR5831H POWER RECTIFIERS
MBR5831H1 POWER RECTIFIERS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® MOTOROLA IN5823,lN5824 IN5825 MBRS82S,H, H1 Designers Data Sheet HOT CARRIER POWER RECTIFIERS · .. employing the Schottky Barrier principle in a large area metal- to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity-protection diodes. • Extremely Low vF • High Surge Capacity • Low Stored Charge, Majority • TX Version Available • Carrier Conduction Low Power Loss/ High Efficiency Designer's Data for ~'Worst Case" Conditions The Designers Data sheets permit the design of most circuits entirely from the information presented.