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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFET High Frequency Amplifier
N–Channel — Depletion
1 DRAIN
3 GATE
2 SOURCE
J304
MAXIMUM RATINGS
Rating
Symbol
Value
Drain – Gate Voltage
Gate–Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C Derate above 25°C
VDG VGS
IG PD
– 30
– 30
10 350 2.8
Lead Temperature (1/16″ from Case for 10 Seconds)
TL 300
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage (IG = 1.0 µAdc, VDS = 0)
Gate Reverse Current (VGS = –20 Vdc, VDS = 0)
Gate – Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.
J304 Datasheet
