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BSW68A - NPN SILICON TRANSISTOR

Download the BSW68A datasheet PDF (BSW66A included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for npn silicon transistor.

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Note: The manufacturer provides a single datasheet file (BSW66A-Motorola.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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T BSW66A BSW67A BSW68A CASE 79, STYLE 1 TO-39 (TO-205AD) TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Symbol BSW BSW BSW 66A 67A 68A Collector-Emitter Voltage VCEO 100 120 150 Collector-Base Voltage VCBO 100 120 150 Emitter-Base Voltage Collector Current - Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C VEBO ic PD 6.0 2.0 0.8 4.57 @Total Device Dissipation Tc = 25°C Derate above 25°C pd 5.0 28.6 Operating and Storage Junction Temperature Range Tj. stg -65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction to Case Rgjc 35 Thermal Resistance, Junction to Ambient R#JA 220 Unit Vdc Vdc Vdc Amp Watt mW/°C Watt mW/°C °C Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
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