Download the BF495 datasheet PDF.
This datasheet also covers the BF494 variant, as both devices belong to the same silicon transistor family and are provided as variant models within a single manufacturer datasheet.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BF495. For precise diagrams, and layout, please refer to the original PDF.
MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @Total Device Dissipation Ta = 25°C Derate abo...
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or Current - Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol VCEO VCBO VEBO ic PD pd Tj.T stg Symbol R0JC Rejc Value 20 30 5.0 100 350 2.8 1.0 8.0 -55 to +150 Max 125 357, Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C Unit °C/W °c/w BF494 BF495 CASE 29-02, STYLE 1 TO-92 (TO-226AA) SILICON Refer to BF254 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted) Characte
BF495 Datasheet
