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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol VCEO VCBO VEBO
ic
PD
pd
Tj, T s tg
Symbol R«JC
Rwc
Value 80 120 7.0
1.0 1.0 8.0 2.5
20 -55 to +150
Max
50 125
Unit Vdc Vdc Vdc Adc Watt
mW/°C
Watt
mW/°C
°C
Unit
°C/W °c/w
BDB05
CASE 29-03, STYLE 1 TO-92 (TO-226AE) ONE WATT
HIGH VOLTAGE TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
BDB05 Datasheet
