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BCW60A,B,C,D
MAXIMUM RATINGS
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
THERMAL CHARACTERISTICS
Symbol vCEO VCBO vEBO
'C
Characteristic
'Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol pd
Storage Temperature
Tstg
'Thermal Resistance Junction to Ambient
R 0JA
mmJ 'Package mounted on 99.5% alumina 10 x 8 x 0.6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage flC = 2.0 mAdc, lg = 0)
Emitter-Base Breakdown Voltage (IE = 1.0 f(Adc, lc = 0)
Collector Cutoff Current (VCE = 32 Vdc)
(VCE = 32 Vdc, TA = 150°C)
Emitter Cutoff Current
(VEB = 4.
BCW60D Datasheet
