Datasheet4U Logo Datasheet4U.com

2N967 - PNP germanium epitaxial mesa transistors

Download the 2N967 datasheet PDF. This datasheet also covers the 2N963 variant, as both devices belong to the same pnp germanium epitaxial mesa transistors family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N963-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2N90 N-Channel MOSFET Transistor Inchange Semiconductor
2N90 N-CHANNEL POWER MOSFET Unisonic Technologies
2N90-FC N-CHANNEL MOSFET UTC
2N909 SI NPN LO-PWR BJT New Jersey Semi-Conductor
2N914 NPN Transistor Telefunken

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N960 PNP germanium epitaxial mesa transistors
2N961 PNP germanium epitaxial mesa transistors
2N962 PNP germanium epitaxial mesa transistors
2N963 PNP germanium epitaxial mesa transistors
2N964 PNP germanium epitaxial mesa transistors

Full PDF Text Transcription

Click to expand full text
2N960 SERIES (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic Output Capacitance (VCS = 10 Vde, ~ = 0, f = 1 MHz) Symbol Min Typ Max Unit Cob pF - 2.2 4.0 Emitter Transition Capacitance (VES = 1 Vde) Turn-On Time All Types (IC = 10 mAde, lSI =5 mAde, VSE(off) = 1. 25 Vde) (IC = 100 mAde, lSI = 5 mAde, VSE(off) = 1.25 Vde) Turn-Off Time (IC = 10 mAde, lSI = 1 mAde, Ia2 = 0.25 mAde) 2N960,2N961,2N964,2N965 2N962,2N966 (IC = 100 mAde, IBI = 5 mAde, IB2 = 1.25 mAde) 2N960,2N961,2N964,2N965 2N962,2N966 Rise Time Constant Hole Storage Factor Fall Time Constant Total Control Charge (IC = 10 mAde, IB = 1 mAde) (Ie = 100 mAde, IB = 5 mAde) . 2N960,2N961,2N964,2N965 2N9 62, 2N966 2N960, 2N961, 2N964, 2N965 2N962,2N966 C'!'e ton toff TRE K' s TFE ~ pF - 2.0 3.
Published: |